Wafer level light-emitting diode array and method for manufacturing same

摘要

Disclosed are a light emitting diode array on a wafer level and a method of forming the same. The light emitting diode array includes a growth substrate; a plurality of light emitting diodes arranged on the substrate, wherein each of the plurality of light emitting diodes has a first semiconductor layer, an active layer and a second semiconductor layer; and a plurality of upper electrodes arranged on the plurality of light emitting diodes and formed of an identical material, wherein each of the plurality of upper electrodes is electrically connected to the first semiconductor layer of a respective one of the light emitting diodes. At least one of the upper electrodes is electrically connected to the second semiconductor layer of an adjacent one of the light emitting diodes, and another of the upper electrodes is insulated from the second semiconductor layer of an adjacent one of the light emitting diodes. Accordingly, it is possible to provide a light emitting diode array that can be driven under at a high voltage and simplify a forming process thereof.

主权项

1. A light emitting diode array, comprising:
a growth substrate; a plurality of light emitting diodes arranged on the substrate, each of the plurality of light emitting diodes having a first semiconductor layer, an active layer and a second semiconductor layer; and a plurality of upper electrodes arranged on the plurality of light emitting diodes and formed of an identical material, each of the plurality of upper electrodes being electrically connected to the first semiconductor layer of a respective one of the light emitting diodes, wherein at least one of the upper electrodes is electrically connected to the second semiconductor layer of an adjacent one of the light emitting diodes, and another of the upper electrodes is insulated from the second semiconductor layer of an adjacent one of the light emitting diodes, wherein each of the light emitting diodes has a via hole for causing the first semiconductor layer to be exposed through the second semiconductor layer and the active layer, and wherein each of the upper electrodes is connected to the first semiconductor layer of a respective one of the light emitting diodes through the via hole.