发明名称 Semiconductor ceramic and semiconductor ceramic element
摘要 Provided is a semiconductor ceramic element constructed by using a semiconductor ceramic that generates metal-insulator transition at a temperature of actual use and has a sufficient strength to enable easy handling. The semiconductor ceramic element has an element main body having a semiconductor ceramic made of a perovskite-type or pyrochlore-type oxide containing a rare earth element, nickel, and titanium, in which a part of the nickel is present as metal nickel; and a pair of electrodes formed to interpose the element main body therebetween. This semiconductor ceramic element shows a sharp resistance change within a temperature range of actual use, and can be used advantageously as a temperature sensor.
申请公布号 US9318684(B2) 申请公布日期 2016.04.19
申请号 US201313944002 申请日期 2013.07.17
申请人 MURATA MANUFACTURING CO., LTD. 发明人 Koto Kiyohiro
分类号 H01B1/02;H01B1/22;H01L37/00;G01K3/00;G01K7/16;H01C7/04;C04B35/462;C04B35/626;C04B35/634;C22C29/12;H01F1/40;C22C19/03 主分类号 H01B1/02
代理机构 Arent Fox LLP 代理人 Arent Fox LLP
主权项 1. A semiconductor ceramic comprising a perovskite or pyrochlore oxide containing Dy or Er, nickel, and titanium, wherein a part of said nickel is present as metal nickel, the semiconductor ceramic is a ferromagnetic substance, and the semiconductor ceramic element has resistance change characteristics relative to temperature that are larger in a temperature range of about 0° C. to +80° C. than at temperatures immediately on either side of said temperature range.
地址 Nagaokakyo-Shi, Kyoto-Fu JP