Mechanisms for forming image-sensor device with deep-trench isolation structure

摘要

A method for fabricating an image-sensor device is provided. The method includes forming a radiation-sensing region and a doped isolation region in a semiconductor substrate. The doped isolation region is adjacent to the radiation-sensing region. The method also includes thinning the semiconductor substrate such that the radiation-sensing region and the doped isolation region are exposed. The method further includes partially removing the doped isolation region to form a recess. In addition, the method includes forming a negatively charged film over an interior surface of the recess and a surface of the radiation-sensing exposed after the thinning of the semiconductor substrate.

主权项

1. A method of fabricating an image-sensor device, comprising:
providing a substrate having a front surface and a back surface; forming a radiation-sensing region and a doped isolation region adjacent to the front surface, the doped isolation region being adjacent to the radiation-sensing region; forming a trench in the doped isolation region from the back surface; and forming a negatively charged film over the back surface and covering an interior surface of the trench.