Solid-state imaging device

摘要

A solid-state imaging device that includes a pixel including a photoelectric conversion section, and a conversion section that converts an electric charge generated by photoelectric conversion into a pixel signal. In the solid-state imaging device, substantially only a gate insulation film is formed on a substrate corresponding to an area under a gate electrode of at least one transistor in the pixel.

主权项

1. A solid-state imaging device comprising:
a substrate; a photoelectric conversion section disposed in the substrate; an element isolation region disposed adjacent to the photoelectric conversion section; a floating diffusion electrically connected to the photoelectric conversion section; an amplification transistor having a gate electrode and an active region; and a contact section disposed on the gate electrode of the amplification transistor and disposed directly above the active region of the amplification transistor, wherein, the floating diffusion is electrically connected to the gate electrode of the amplification transistor via the contact section, a width of the gate electrode of the amplification transistor is larger than a width of the active region of the amplification transistor.