| 摘要 |
A thin film transistor array substrate according to an embodiment of the present invention includes a buffer layer, an active layer, a gate insulation film, a gate electrode, an interlayer insulating film, a source electrode, and a drain electrode. The buffer layer is positioned on the substrate. The active layer is positioned on the buffer layer and formed of a silicon dioxide semiconductor, and includes a channel region. The gate insulating film is positioned on the channel region. The gate electrode is positioned on the gate insulating film. The interlayer insulating film is positioned on the gate electrode. The source and drain electrodes are positioned on the interlayer insulating film, each being connected to the active layer. In addition, it is characterized in that oxygen contents in the channel region of the active layer and in an offset region except for the channel region are the same. |
