Power semiconductor chip with a metallic moulded body for contacting thick wires or strips and method for the production thereof

摘要

The invention relates to a power semiconductor chip (10) having at least one upper-sided potential surface and contacting thick wires (50) or strips, comprising a connecting layer (I) on the potential surfaces, and at least one metal molded body (24, 25) on the connecting layer(s), the lower flat side thereof facing the potential surface being provided with a coating to be applied to the connecting layer (I) according to a connection method, and the material composition thereof and the thickness of the related thick wires (50) or strips arranged on the upper side of the molded body used according to the method for contacting are selected corresponding to the magnitude.

主权项

1. A power semiconductor chip comprising:
an upper bonding layer disposed on a potential face on an upper side of the power semiconductor chip, at least one upper metallic moulded body disposed on the upper bonding layer, a lower flat side of the at least one upper metallic moulded body facing the potential face and being coated to bond to the upper bonding layer, and thick wires or strips connected to an upper side of the at least one upper metallic moulded body, wherein a surface area of the upper bonding layer for bonding to the lower flat side of the at least one upper metallic moulded body in a plan view is smaller than the lower flat side of the at least one upper metallic moulded body such that a rim of the at least one upper metallic moulded body is fixed on an organic, non-conducting carrying foil.