发明名称 Method for the production of layers containing indium oxide
摘要 The present invention relates to a liquid phase process for producing indium oxide-containing layers from nonaqueous solution, in which an anhydrous composition containing at least one indium oxo alkoxide of the generic formula MxOy(OR)z[O(R′O)cH]aXb[R″OH]d where x=3-25, y=1-10, z=3-50, a=0-25, b=0-20, c=0-1, d=0-25, M=In, R, R′, R″=organic radical, X=F, Cl, Br, I and at least one solvent are applied to a substrate, optionally dried, and converted to an indium oxide-containing layer, to the layers producible by the process according to the invention and to the use thereof.
申请公布号 US9315901(B2) 申请公布日期 2016.04.19
申请号 US201013391114 申请日期 2010.08.13
申请人 Evonik Degussa GmbH 发明人 Steiger Juergen;Pham Duy Vu;Thiem Heiko;Merkulov Alexey;Hoppe Arne
分类号 C23C18/12 主分类号 C23C18/12
代理机构 Oblon, McClelland. Maier & Neustadt, L.L.P. 代理人 Oblon, McClelland. Maier & Neustadt, L.L.P.
主权项 1. A liquid phase process for producing an indium oxide-comprising layer, the process comprising: (a) applying an anhydrous solution comprising an indium oxo alkoxide and a solvent, to obtain a substrate coated with an intermediate layer; (b) optionally, drying the coated substrate; and (c) converting the intermediate layer, to obtain a substrate coated with the indium oxide-comprising layer, wherein the indium oxo alkoxide has a formula (I): MxOy(OR)z[O(R′O)cH]aXb[R″OH]d  (I),wherein x is 3-25, y is 1-10, z is 3-50, a is 0-25, b is 0-20, c is 0-1, d is 0-25, M is In, R, R′, and R″ are each independently an organic radical, and X is F, Cl, Br, or I.
地址 Essen DE