发明名称 |
Method for the production of layers containing indium oxide |
摘要 |
The present invention relates to a liquid phase process for producing indium oxide-containing layers from nonaqueous solution, in which an anhydrous composition containing at least one indium oxo alkoxide of the generic formula MxOy(OR)z[O(R′O)cH]aXb[R″OH]d where x=3-25, y=1-10, z=3-50, a=0-25, b=0-20, c=0-1, d=0-25, M=In, R, R′, R″=organic radical, X=F, Cl, Br, I and at least one solvent are applied to a substrate, optionally dried, and converted to an indium oxide-containing layer, to the layers producible by the process according to the invention and to the use thereof. |
申请公布号 |
US9315901(B2) |
申请公布日期 |
2016.04.19 |
申请号 |
US201013391114 |
申请日期 |
2010.08.13 |
申请人 |
Evonik Degussa GmbH |
发明人 |
Steiger Juergen;Pham Duy Vu;Thiem Heiko;Merkulov Alexey;Hoppe Arne |
分类号 |
C23C18/12 |
主分类号 |
C23C18/12 |
代理机构 |
Oblon, McClelland. Maier & Neustadt, L.L.P. |
代理人 |
Oblon, McClelland. Maier & Neustadt, L.L.P. |
主权项 |
1. A liquid phase process for producing an indium oxide-comprising layer, the process comprising:
(a) applying an anhydrous solution comprising an indium oxo alkoxide and a solvent, to obtain a substrate coated with an intermediate layer; (b) optionally, drying the coated substrate; and (c) converting the intermediate layer, to obtain a substrate coated with the indium oxide-comprising layer, wherein the indium oxo alkoxide has a formula (I):
MxOy(OR)z[O(R′O)cH]aXb[R″OH]d (I),wherein
x is 3-25, y is 1-10, z is 3-50, a is 0-25, b is 0-20, c is 0-1, d is 0-25, M is In, R, R′, and R″ are each independently an organic radical, and X is F, Cl, Br, or I. |
地址 |
Essen DE |