Integrated circuit having a MOM capacitor and method of making same

摘要

An integrated circuit can include a MOM capacitor formed simultaneously with other devices, such as finFETs. A dielectric layer formed on a substrate has a first semiconductor fin therein and a second semiconductor fin therein. Respective top portions of the fins are removed to form respective recesses in the dielectric layer. First and second electrodes are formed in the recesses. The first and second electrodes and the interjacent dielectric layer form a MOM capacitor.

主权项

1. A method of forming an integrated circuit comprising:
forming on a substrate a dielectric layer having a first semiconductor fin therein and a second semiconductor fin therein; removing a top portion of the first semiconductor fin to form a first recess in the dielectric layer and removing a top portion of the second semiconductor fin to form a second recess in the dielectric layer; and forming a first electrode in the first recess above the first semiconductor fin and a second electrode physically isolated from the first electrode in the second recess above the second semiconductor fin, the first electrode and the second electrode comprising electrodes of a MOM capacitor, wherein no portions of the first electrode and the second electrode are disposed on sidewalls of the first semiconductor fin and the second semiconductor fin.