发明名称 Method of forming a semiconductor socket
摘要 A semiconductor socket including a substrate with a plurality of through holes extending from a first surface to a second surface. A plurality of discrete contact members are located in the plurality of the through holes. The plurality of contact members each include a proximal end accessible from the second surface, and a distal end extending above the first surface. At least one dielectric layer is bonded to the second surface of the substrate with recesses corresponding to target circuit geometry. A conductive material deposited in at least a portion of the recesses to form conductive traces redistributing terminal pitch of the proximal ends of the contact members.
申请公布号 US9320144(B2) 申请公布日期 2016.04.19
申请号 US201013319158 申请日期 2010.06.15
申请人 HSIO Technologies, LLC 发明人 Rathburn James
分类号 H05K3/00;H05K1/14;H01R12/57;H05K3/34;H01R12/52 主分类号 H05K3/00
代理机构 代理人
主权项 1. A method of forming a semiconductor socket comprising the steps of: providing a substrate with a plurality of through holes extending from a first surface to a second surface, the substrate having a plurality of recesses formed in the second surface that overlap with the through holes; preparing separate from the substrate a plurality of discrete contact members comprising distal portions with cantilever beams and proximal portions configured to reside in the recesses formed in the second surface of the substrate; mechanically inserting the distal portions of the discrete contact members in a plurality of the recesses so that the cantilever beams extend into the through holes and are located above the first surface of the substrate a sufficient amount to permit flexure when coupled with terminal on semiconductor devices, and the proximal ends positioned in the recesses and accessible from the second surface; depositing at least one dielectric layer selectively on the second surface of the substrate to create trace recesses corresponding to a target circuit geometry; depositing a conductive material in a plurality of the trace recesses to form conductive traces redistributing terminal pitch of the proximal ends of the contact members; and compressively engaging terminals on a first semiconductor device with the distal ends of the contact members to elastically deform and flex the cantilever beams toward the first surface of the substrate.
地址 Maple Grove MN US