发明名称 |
Method of forming a semiconductor socket |
摘要 |
A semiconductor socket including a substrate with a plurality of through holes extending from a first surface to a second surface. A plurality of discrete contact members are located in the plurality of the through holes. The plurality of contact members each include a proximal end accessible from the second surface, and a distal end extending above the first surface. At least one dielectric layer is bonded to the second surface of the substrate with recesses corresponding to target circuit geometry. A conductive material deposited in at least a portion of the recesses to form conductive traces redistributing terminal pitch of the proximal ends of the contact members. |
申请公布号 |
US9320144(B2) |
申请公布日期 |
2016.04.19 |
申请号 |
US201013319158 |
申请日期 |
2010.06.15 |
申请人 |
HSIO Technologies, LLC |
发明人 |
Rathburn James |
分类号 |
H05K3/00;H05K1/14;H01R12/57;H05K3/34;H01R12/52 |
主分类号 |
H05K3/00 |
代理机构 |
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代理人 |
|
主权项 |
1. A method of forming a semiconductor socket comprising the steps of:
providing a substrate with a plurality of through holes extending from a first surface to a second surface, the substrate having a plurality of recesses formed in the second surface that overlap with the through holes; preparing separate from the substrate a plurality of discrete contact members comprising distal portions with cantilever beams and proximal portions configured to reside in the recesses formed in the second surface of the substrate; mechanically inserting the distal portions of the discrete contact members in a plurality of the recesses so that the cantilever beams extend into the through holes and are located above the first surface of the substrate a sufficient amount to permit flexure when coupled with terminal on semiconductor devices, and the proximal ends positioned in the recesses and accessible from the second surface; depositing at least one dielectric layer selectively on the second surface of the substrate to create trace recesses corresponding to a target circuit geometry; depositing a conductive material in a plurality of the trace recesses to form conductive traces redistributing terminal pitch of the proximal ends of the contact members; and compressively engaging terminals on a first semiconductor device with the distal ends of the contact members to elastically deform and flex the cantilever beams toward the first surface of the substrate. |
地址 |
Maple Grove MN US |