FinFET device and method of fabricating same

摘要

The present disclosure provides a semiconductor device. The semiconductor device includes a substrate having isolation regions, a gate region, source and drain regions separated by the gate region, a first fin structure in a gate region. The first fin structure includes a first semiconductor material layer as a lower portion of the first fin structure, a semiconductor oxide layer as an outer portion of a middle portion of the first fin structure, the first semiconductor material layer as a center portion of the middle portion of the first fin structure and a second semiconductor material layer as an upper portion of the first fin structure. The semiconductor device also includes a source/drain feature over the substrate in the source/drain region between two adjacent isolation regions and a high-k (HK)/metal gate (MG) stack in the gate region, wrapping over a portion of the first fin structure.

主权项

1. A semiconductor device comprising:
a substrate having a gate region and source and drain (S/D) regions; a first fin structure in the gate region, the first fin structure including:
a first semiconductor material that is a portion of the substrate;a second semiconductor material disposed on the first semiconductor material;a third semiconductor material disposed on the second semiconductor material; anda semiconductor oxide disposed on an outer side surface of the second semiconductor material; and a high-k (HK)/metal gate (MG) stack in the gate region, the HK/MG stack wrapping over a portion of the first fin structure, wherein the HK/MG stack includes:
an interfacial layer disposed on the semiconductor oxide and the third semiconductor material; anda high-K dielectric layer over and contacting the interfacial layer, wherein the high-K dielectric layer physically contacts two opposing side surfaces of the interfacial layer and a top surface of the interfacial layer there between; and S/D features in the S/D region.