| 主权项 |
1. A semiconductor device comprising:
a substrate; first and second trench gates extending long in one direction in the substrate; third and fourth trench gates in the substrate, a fifth trench gate extending in the substrate parallel to the first and second trench gates; a sixth trench gate extending in the substrate parallel to the third and fourth trench gates, the third, fourth and sixth trench gates connecting the first, second, and fifth trench gates to each other; a first region defined in the substrate by the first to fourth trench gates,
the first region being surrounded by the first to fourth trench gates,the first region including a first high-voltage semiconductor device,the first high-voltage semiconductor device including a body and an emitter in the body,
the body being a first conduction type, andthe emitter being a second conduction type that is opposite the first conduction type; and a second region and a third region defined in the substrate,
the second region being defined by the first, second, fourth, and sixth trench gates,the third region being defined by the second, fourth, fifth, and sixth trench gates,the second region being in surface contact with the first region,the third region being in point contact with the first region,the second region and the third region including floating wells that are the first conduction type. |
