Semiconductor device and manufacturing method thereof for protecting metal-gate from oxidation

摘要

A semiconductor device and a manufacturing method thereof is provided. The method comprises: providing a substrate for the semiconductor device with a gate structure and a first dielectric interlayer being formed thereon, said gate structure comprising a metal gate and an upper surface of said first dielectric interlayer being substantially flush with an upper surface of said gate; forming an interface layer to cover at least the upper surface of said gate such that the upper surface of said gate is protected from being oxidized; and forming a second dielectric interlayer on said interface layer.

主权项

1. A semiconductor device, comprising:
a substrate; a gate structure and a first dielectric interlayer on said substrate, wherein
said gate structure comprises a metal gate,the substrate includes an active area which is adjacent to the gate structure, and the first dielectric interlayer covers the active area, andan upper surface of said first dielectric interlayer is substantially flush with an upper surface of said metal gate; an interface layer that overlies the upper surface of said metal gate and the upper surface of the first dielectric interlayer such that the upper surface of the gate is protected from being oxidized; and a second dielectric interlayer on said interface layer; wherein said second dielectric interlayer has first openings that penetrate through said second dielectric interlayer, wherein said interface layer has second openings that penetrate through said interface layer, said second openings are respectively underlying said first openings such that at least a part of the upper surface of said metal gate and a part of a surface of said active area are exposed.