发明名称 |
Beol structures incorporating active devices and mechanical strength |
摘要 |
An integrated circuit and method includes a substrate, a plurality of semiconductor device layers monolithically integrated on the substrate, and a metal wiring layer with vias interconnecting the plurality of semiconductor device layers. The semiconductor device layers are devoid of bonding or joining interface with the substrate. |
申请公布号 |
US9318415(B2) |
申请公布日期 |
2016.04.19 |
申请号 |
US201414148532 |
申请日期 |
2014.01.06 |
申请人 |
GLOBALFOUNDRIES INC. |
发明人 |
Gates Stephen M;Edelstein Daniel C.;Nitta Satyanarayana V. |
分类号 |
H01L23/48;H01L27/06;H01L25/18;H01L21/02;H01L23/00;H01L25/00;H01L29/66;H01L29/861;H01L29/872;H01L23/522;H01L23/532;H01L27/01 |
主分类号 |
H01L23/48 |
代理机构 |
Roberts, Mlotkowski, Safran & Cole PC |
代理人 |
Canale Anthony;Calderon Andrew M.;Roberts, Mlotkowski, Safran & Cole PC |
主权项 |
1. A circuit, comprising:
a substrate; a plurality of semiconductor device layers monolithically formed on the substrate; and a wiring layer with vias interconnecting the plurality of semiconductor device layers. |
地址 |
Grand Cayman KY |