发明名称 Beol structures incorporating active devices and mechanical strength
摘要 An integrated circuit and method includes a substrate, a plurality of semiconductor device layers monolithically integrated on the substrate, and a metal wiring layer with vias interconnecting the plurality of semiconductor device layers. The semiconductor device layers are devoid of bonding or joining interface with the substrate.
申请公布号 US9318415(B2) 申请公布日期 2016.04.19
申请号 US201414148532 申请日期 2014.01.06
申请人 GLOBALFOUNDRIES INC. 发明人 Gates Stephen M;Edelstein Daniel C.;Nitta Satyanarayana V.
分类号 H01L23/48;H01L27/06;H01L25/18;H01L21/02;H01L23/00;H01L25/00;H01L29/66;H01L29/861;H01L29/872;H01L23/522;H01L23/532;H01L27/01 主分类号 H01L23/48
代理机构 Roberts, Mlotkowski, Safran & Cole PC 代理人 Canale Anthony;Calderon Andrew M.;Roberts, Mlotkowski, Safran & Cole PC
主权项 1. A circuit, comprising: a substrate; a plurality of semiconductor device layers monolithically formed on the substrate; and a wiring layer with vias interconnecting the plurality of semiconductor device layers.
地址 Grand Cayman KY
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