发明名称 Ductile mode drilling methods for brittle components of plasma processing apparatuses
摘要 A method of drilling holes comprises ductile mode drilling the holes in a component of a plasma processing apparatus with a cutting tool wherein the component is made of a nonmetallic hard and brittle material. The method comprises drilling each hole in the component by controlling a depth of cut while drilling such that a portion of the brittle material undergoes high pressure phase transformation and forms amorphous portions of the brittle material during chip formation. The amorphous portions of the brittle material are removed from each hole such that a wall of each hole formed in the component has an as drilled surface roughness (Ra) of about 0.2 to 0.8 μm.
申请公布号 US9314854(B2) 申请公布日期 2016.04.19
申请号 US201313754068 申请日期 2013.01.30
申请人 LAM RESEARCH CORPORATION 发明人 Huang Lihua Li;Scott Duane D.;Doench Joseph P.;Burns Jamie;Stenta Emily P.;Bettencourt Gregory R.;Daugherty John E.
分类号 H01B13/00;B23B35/00;B28D1/14;B28D5/02;H01J37/32 主分类号 H01B13/00
代理机构 Buchanan Ingersoll & Rooney 代理人 Buchanan Ingersoll & Rooney
主权项 1. A method of ductile mode drilling holes in a component of a plasma processing apparatus with a cutting tool wherein the component is made of a nonmetallic hard and brittle material comprising: drilling each hole in the component by controlling a depth of cut while drilling such that a portion of the brittle material undergoes high pressure phase transformation and forms amorphous portions of the brittle material during chip formation; and removing amorphous portions of the brittle material from each hole such that a wall of each hole formed in the component has an as drilled surface roughness (Ra) of about 0.2 to 0.8 μm; wherein the component is a silicon or silicon carbide showerhead electrode.
地址 Fremont CA US