Semiconductor device including a gate electrode

摘要

A semiconductor device includes a plurality of first gate electrodes buried in a semiconductor substrate including an active region and a device isolation film, a plurality of junction regions including storage node junction regions and a bit line junction region disposed between the storage node junction regions, a plurality of storage node contact plugs respectively disposed over and coupled to the storage node junction regions, a plurality of storage nodes respectively disposed over and coupled to the storage node contact plugs, and a second gate electrode disposed over a sidewall of a corresponding one of the storage node contact plugs. A vertical transistor includes the second gate electrode and the corresponding storage node contact plug and stores charges leaked from a corresponding one of the storage nodes.

主权项

1. A semiconductor device comprising:
a plurality of first gate electrodes buried in a semiconductor substrate including an active region and a device isolation film; a plurality of junction regions, each of the plurality of junction regions disposed in a portion of the active region between two adjacent first gate electrodes, the plurality of junction regions including storage node junction regions and a bit line junction region disposed between the storage node junction regions; a plurality of storage node contact plugs disposed over and coupled to the storage node junction regions, respectively; a plurality of storage nodes coupled to and disposed over the plurality of storage node contact plugs, respectively; and a second gate electrode disposed over a sidewall of a corresponding one of the plurality of storage node contact plugs, wherein a vertical transistor includes the second gate electrode and the corresponding one of the plurality of storage node contact plugs and stores charges leaked from a corresponding one of the plurality of storage nodes.