WORKPIECE PROCESSING METHOD

摘要

The present invention relates to a method for processing an object to be treated, capable of adjusting an opening width of a mask by forming a siliconoxide film at low temperatures without an exclusive film deposition device. The method for processing an object to be treated can form a siliconoxide film by repeating a sequence which includes: a first process (a) of forming a responsive precursor by generating a first gaseous plasma including silicon halogenide in a process container of the plasma process device accommodating an object to be processed; a second process (b) of purging a space in the process container; a third process (c) of forming a siliconoxide film by generating a gaseous plasma including oxygen gas in the process container; and a fourth process (d) of purging a space in the process container.