MANUFACTURING METHOD OF A SEMICONDUCTOR STRUCTURE

摘要

A manufacturing method of a semiconductor structure is provided. The manufacturing method includes the following steps. A substrate is provided. A fin structure and an inter-layer dielectric layer are formed on the substrate. A plurality of gate structures is formed on the substrate. A cap layer is formed on the gate structures. A hard mask is formed on the cap layer. A first patterned photoresist layer covering the gate structures is formed on the hard mask. The hard mask is etched and patterned to form a patterned hard mask, such that the patterned hard mask covers the gate structures. A second patterned photoresist layer including a plurality of openings corresponding to the fin structure is formed on the patterned hard mask. The cap layer and the inter-layer dielectric layer are etched to form a plurality of first trenches exposing part of the fin structure.

主权项

1. A manufacturing method of a semiconductor structure, comprising:
providing a substrate; forming a fin structure and an inter-layer dielectric layer on the substrate; forming a plurality of gate structures on the substrate; forming a cap layer on the gate structures; forming a hard mask on the cap layer; forming a first patterned photoresist layer on the hard mask, wherein the first patterned photoresist layer covers the gate structures; etching and patterning the hard mask to form a patterned hard mask, such that the patterned hard mask covers the gate structures; forming a second patterned photoresist layer on the patterned hard mask, wherein the second patterned photoresist layer comprises a plurality of openings corresponding to the fin structure; and etching the cap layer and the inter-layer dielectric layer to form a plurality of first trenches, wherein the first trenches expose part of the fin structure.