发明名称 |
HIGH TEMPERATURE DATA RETENTION IN MAGNETORESISTIVE RANDOM ACCESS MEMORY |
摘要 |
Techniques and circuits for storing and retrieving data using spin-torque magnetic memory cells as anti-fuses are presented. Circuits are included to allow higher-magnitude voltages and currents to be applied to magnetic memory cells to intentionally break down the dielectric layer included the magnetic tunnel junction. Magnetic memory cells having a normal-resistance magnetic tunnel junction with an intact dielectric layer are used to store a first data state, and magnetic memory cells having a magnetic tunnel junction with a broken-down dielectric layer are used to store a second data state. Data can be stored in such a manner during wafer probe and then later read out directly or copied into other magnetic or non-magnetic memory on the device for use in operations after the device is included in a system. |
申请公布号 |
WO2016057063(A1) |
申请公布日期 |
2016.04.14 |
申请号 |
WO2015US00112 |
申请日期 |
2015.10.09 |
申请人 |
EVERSPIN TECHNOLOGIES, INC. |
发明人 |
SLAUGHTER, JON;JANESKY, JASON, ALLEN |
分类号 |
G11C11/14 |
主分类号 |
G11C11/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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