Self-aligned Double Patterning

摘要

A system and method for a semiconductor device are provided. An embodiment comprises a dielectric layer and masking layers over the dielectric layer. A thin spacer layer is used to form spacers alongside a pattern. A reverse image of the spacer pattern is formed and an enlargement process is used to slightly widen the pattern. The widened pattern is subsequently used to pattern an underlying layer. This process may be used to form a pattern in a dielectric layer, which openings may then be filled with a conductive material.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming a first patterned mask layer, the first patterned mask layer having a first opening and a second opening, the first opening and the second opening being co-linear, a first end of the first opening having a first center region and first side regions on opposing sides of the first center region, the first side regions extending away from the first center region toward the second opening; performing an enlargement process to reduce a distance the first side regions extend from the first center region, thereby forming an enlarged pattern; and after the performing the enlargement process, transferring the enlarged pattern to an underlying layer, thereby forming openings in the underlying layer.