| 摘要 |
In a method of fabricating a FinFET, the sidewall of a semiconductor layer formed on a substrate has a specific roughness. The use of fins having roughness can cause the deviation of characteristic between transistors due to their shapes. The purpose of the present invention is to provide a method for manufacturing a FinFET to improve device characteristic by easily reducing the roughness of the sidewall of the fin after formation. According to an embodiment of the present invention, to reduce the roughness of the sidewall, the sidewall of the semiconductor fin is etched by an ion beam extracted from a grid. |
