发明名称 METHOD FOR SUPPORTING GROWN SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a method for supporting a grown single crystal in a region of a conic area of the grown single crystal by a support medium during crystallization of the grown single crystal following FZ method.SOLUTION: There is provided a method including a step in which a support medium is pressed onto a conic area of a grown single crystal at a temperature at which a first material of the support medium becomes soft, and successively, the support medium is pressed onto the conic area of the grown single crystal until the first material of the support medium and a second material thereof which keeps a hard state at the temperature are brought into contact with the conic area of the grown single crystal.SELECTED DRAWING: Figure 1
申请公布号 JP2016052983(A) 申请公布日期 2016.04.14
申请号 JP20150163553 申请日期 2015.08.21
申请人 SILTRONIC AG 发明人 KURT NIEDERER;HELMUT TEROERDE;JOSEF BERGER;GOETZ MEISTERERNST;FRANK MUEMMLER;SIMON ZITZELSBERGER
分类号 C30B13/32 主分类号 C30B13/32
代理机构 代理人
主权项
地址