| 摘要 |
PROBLEM TO BE SOLVED: To provide: a method for manufacturing a semiconductor substrate product by high-speed and accurate etching (with defects held down), which never involves an alkali metal as an essential component, and achieved by a simple arrangement as far as possible; and an etching method thereof.SOLUTION: A method for manufacturing a semiconductor substrate product comprises the steps of: preparing an aqueous solution including 7-25 mass% of quaternary alkyl ammonium hydroxide; preparing a semiconductor substrate having a silicon film composed of a polycrystalline silicon film or an amorphous silicon film; and applying the aqueous solution heated to 80°C or higher to the semiconductor substrate to etch at least partially the silicon film.SELECTED DRAWING: Figure 1 |
