| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has excellent heat resistance and an UBM (Under Bump Metal) layer achieving solder wettability which does not deteriorate even after a heat treatment at over 250°C and reflow by lead-free solder.SOLUTION: In a semiconductor device having an UBM layer on an electrode of a base material, the UBM layer has either structure of Ni layer/Sn layer/Au layer or Ni layer/Pt layer/Au layer. It is preferable that the electrode is Al, Al alloy, Cu or Cu alloy.SELECTED DRAWING: None |
