| 发明名称 |
Semiconductor Devices and Methods of Manufacturing Thereof |
| 摘要 |
In one embodiment, a method of forming a semiconductor device includes forming a first porous semiconductor layer over a top surface of a substrate. A first epitaxial layer is formed over the first porous semiconductor layer. A circuitry is formed within and over the first epitaxial layer. The circuitry is formed without completely oxidizing the first epitaxial layer. |
| 申请公布号 |
US2016104780(A1) |
申请公布日期 |
2016.04.14 |
| 申请号 |
US201514975565 |
申请日期 |
2015.12.18 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Mauder Anton;Schulze Hans-Joachim;Timme Hans-Joerg;Hirler Franz;Santos Rodriguez Francisco Javier |
| 分类号 |
H01L29/20;H01L21/02;H01L29/04;H01L21/3065;H01L21/324;H01L29/45;H01L21/78;H01L21/306 |
主分类号 |
H01L29/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a semiconductor device, the method comprising:
forming a first porous semiconductor layer over a top surface of a substrate; forming a first epitaxial layer over the first porous semiconductor layer; forming circuitry within and over the first epitaxial layer, wherein the circuitry is formed without completely oxidizing the first epitaxial layer; thinning the substrate from a back surface to form a thinned substrate; and dicing the substrate to form singulated chips, wherein the thinning is stopped before reaching the first porous semiconductor layer. |
| 地址 |
Neubiberg DE |
