| 摘要 |
772,583. Semi-conductor devices. PHILIPS ELECTRICAL INDUSTRIES, Ltd. June 28, 1955 [July 1, 1954], No. 18648/55. Class 37. A semi-conductor device such as a transistor or crystal diode comprises germanium or silicon soldered to a carrier plate which consists of chromium, molybdenum or tungsten. The plates may be porous and obtained by sintering powder of the specified metal. The coefficients of expansion of the carrier plate and semiconductor may be matched and the thermal conductivity of the carrier plate improved by varying the volume of the pores and filling the pores with gold, silver or copper with or without a very small amount of germanium or silicon. In the crystal diode shown a germanium wafer 4 is soldered at 3 to a molybdenum plate 1 having a gold layer 2. The plate 1 is silver-soldered at 6 to a copper, aluminium, nickel or iron cooling plate 5. The plate 1 consists of sintered tungsten whose pores are filled with silver or other solder 3. The thin gold layer 2 enhances the adhesion of solder 3 which may consist of tin with added donors or acceptors. The lower side of the carrier plate 1 may be gold-plated. |
