| 摘要 |
<p>A semiconductor color sensor comprising a semiconductor layer including a lamination of a plurality of pn or pin junctions, the semiconductor layer having an electrically conductive layer on both surfaces thereof. The color sensor is so constituted that the generation of photo-carriers should increase with the increasing distance from the junction of the input side in the whole wavelength range to be measured, and current is detected by changing the voltage between said two electrically conductive layers. The color sensor of the invention features its simplified structure, and it may easily be formed into an integrated circuit and formed with an increased effective area. In addition, the manufacturing process is simplified and the yield is increased, thus decreasing costs.</p> |
