发明名称 半導体装置
摘要 The present invention provides a peeling off method without giving damage to the peeled off layer, and aims at being capable of peeling off not only a peeled off layer having a small area but also a peeled off layer having a large area over the entire surface at excellent yield ratio. The metal layer or nitride layer 11 is provided on the substrate, and further, the oxide layer 12 being contact with the foregoing metal layer or nitride layer 11 is provided, and furthermore, if the lamination film formation or the heat processing of 500° C. or more in temperature is carried out, it can be easily and clearly separated in the layer or on the interface with the oxide layer 12 by the physical means.
申请公布号 JP5902796(B2) 申请公布日期 2016.04.13
申请号 JP20140239572 申请日期 2014.11.27
申请人 株式会社半導体エネルギー研究所 发明人 高山 徹;丸山 純矢;水上 真由美;山崎 舜平
分类号 H01L21/02;H01L29/786;G02F1/13357;G02F1/1368;G09F9/00;G09F9/30;H01L21/20;H01L21/336;H01L21/762;H01L21/77;H01L21/84;H01L27/12;H01L51/50;H05B33/02;H05B33/04;H05B33/10 主分类号 H01L21/02
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