Semiconductor device

摘要

A semiconductor device including a semiconductor substrate having a first surface and a second surface, the first surface being configured for formation of a semiconductor element; a through hole extending through the semiconductor substrate; and a through electrode disposed in the through hole. The through electrode includes an insulating film disposed along a sidewall of the through hole, a conductive layer comprising a first material disposed along the insulating film, and an electrode layer comprising a second material filled inside the through hole over the conductive layer. The first material is softer than the second material. The second material has a melting point higher than a melting point of the first material. The electrode layer includes a void portion being closed near the second surface of the semiconductor substrate.

主权项

1. A semiconductor device comprising:
a semiconductor substrate having a first surface and a second surface, the first surface being configured for formation of a semiconductor element; a wiring pattern formed along the first surface; a through hole extending through the semiconductor substrate and reaching a portion of the wiring pattern; and a through electrode disposed in the through hole and connected to the wiring pattern at the first surface, the through electrode including an insulating film disposed along a sidewall of the through hole, a conductive layer comprising a titanium film disposed along the insulating film and a copper film disposed along a surface of the titanium film, and an electrode layer comprising a nickel film filled inside the through hole over the conductive layer, the conductive layer being softer than the electrode layer, the electrode layer having a melting point higher than a melting point of the conductive layer, and the electrode layer including a void portion enclosed therein and having an end portion disposed near the second surface of the semiconductor substrate.