发明名称 Semiconductor packages
摘要 A semiconductor package may include a first substrate, a second substrate facing the first substrate, a plurality of first electrical connections disposed between the first substrate and the second substrate, and a first material disposed between the first substrate and the second substrate. The plurality of first electrical connections may electrically couple the first substrate and the second substrate to each other. The first material may surround each of the plurality of first electrical connections, and a width of the first material proximal the first substrate may be smaller than a width of the first material proximal the second substrate.
申请公布号 US9312243(B2) 申请公布日期 2016.04.12
申请号 US201414497721 申请日期 2014.09.26
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Chen Meng-Tse;Tsai Yi-Da;Chen Xi-Hong;Lee Tao-Hua;Chen Wei-Yu;Cheng Ming-Da;Liu Chung-Shi
分类号 H01L23/52;H01L25/065;H01L23/31;H01L25/10;H01L23/498;H01L21/56;H01L23/538;H01L23/00;H01L25/00 主分类号 H01L23/52
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. A semiconductor package comprising: a first substrate having a first side and a second side opposite the first side, the first substrate comprising: a first encapsulant formed over the first side of the first substrate; anda first plurality of electrical features formed at the second side of the first substrate; a second substrate having a first side and a second side opposite the first side, the second substrate comprising a second plurality of electrical features formed on the first side of the second substrate; a plurality of first electrical connections coupled between the first plurality of electrical features and the second plurality of electrical features; a second encapsulant disposed over the first side of the second substrate, the second encapsulant positioned between each of the plurality of first electrical connections; and a first material disposed over the second encapsulant, the first material positioned between each of the plurality of first electrical connections, wherein the first material is separated from the second side of the first substrate.
地址 Hsin-Chu TW