Method of operating nonvolatile memory device controlled by controlling coupling resistance value between bit line and page buffer

摘要

A method of operating a nonvolatile memory device includes determining whether a program operation is performed on even memory cells coupled to even bit lines of a selected page, setting a coupling resistance value between odd bit lines of the selected page and page buffers depending on whether the program operation for the even memory cells is performed, performing a program operation on the odd memory cells coupled to the odd bit lines, and coupling the odd bit line to the page buffer based on the set coupling resistance value and performing an verification operation for verifying whether threshold voltages of the odd memory cells on which the program operation is performed are a target voltage or more.

主权项

1. A method of operating a nonvolatile memory device, the method comprising:
determining whether even memory cells coupled to even bit lines and odd memory cells coupled to odd bit lines in a selected page are programmed; setting a coupling resistance value between the even bit line and a page buffer as a first level or a second level depending on whether the even memory cells and the odd memory cells are programmed; performing a read operation for the even memory cells by coupling the even bit line to the page buffer to the first level of the coupling resistance value when the even memory cells and the odd memory cells are not programmed; setting a coupling resistance value between the odd bit line and the page buffer as the first level; and performing a read operation for the odd memory cells by coupling the even bit line to the page buffer to the first level of the coupling resistance value.