Epitaxy structure of a light emitting element having III-nitride quantum wells

摘要

An epitaxy structure of a light emitting element includes a gallium nitride substrate, an N-type gallium nitride layer, a quantum well unit, and a P-type gallium nitride layer. The gallium nitride substrate includes a gallium nitride buffer layer, a gallium nitride hexagonal prism, and a gallium nitride hexagonal pyramid. The gallium nitride hexagonal prism extends from the gallium nitride buffer layer along an axis. The gallium nitride hexagonal pyramid extends from the gallium nitride hexagonal prism along the axis and gradually expands to form a hexagonal frustum. The N-type gallium nitride layer is located on the gallium nitride hexagonal pyramid. The quantum well unit includes an indium gallium nitride layer located on the N-type gallium nitride layer and a gallium nitride layer located on the indium gallium nitride layer. The P-type gallium nitride layer is located on the gallium nitride layer.

主权项

1. An epitaxy structure of a light emitting element comprising:
a gallium nitride substrate including a gallium nitride buffer layer, a gallium nitride hexagonal prism, and a gallium nitride hexagonal pyramid, with the gallium nitride hexagonal prism extending from the gallium nitride buffer layer along an axis, with the gallium nitride hexagonal pyramid extending from the gallium nitride hexagonal prism along the axis and gradually expanding to form a hexagonal frustum; an N-type gallium nitride layer located on the gallium nitride hexagonal pyramid of the gallium nitride substrate; a quantum well unit including an indium gallium nitride layer and a gallium nitride layer, with the indium gallium nitride layer located on the N-type gallium nitride layer, and with the gallium nitride layer located on the indium gallium nitride layer; and a P-type gallium nitride layer located on the gallium nitride layer of the quantum well unit.