Semiconductor device and method for manufacturing the same

摘要

A semiconductor device and a method for manufacturing the same. The method includes steps hereinafter. A substrate is provided with a first dielectric layer thereon. The first dielectric layer is provided with a trench. Then, a metal layer is formed to fill the trench and to cover the surface of the first dielectric layer. The metal layer is partially removed so that a remaining portion of the metal layer covers the first dielectric layer. A treatment process is performed to transform the remaining portion of the metal layer into a passivation layer on the top portion and a gate metal layer on the bottom portion. A chemical-mechanical polishing process is performed until the first dielectric layer is exposed so that a remaining portion of the passivation layer remains in the trench.

主权项

1. A method for manufacturing a semiconductor device, comprising steps of:
providing a substrate with a first dielectric layer thereon, said first dielectric layer having a trench; depositing a metal layer filling said trench and covering a surface of said first dielectric layer; partially removing said metal layer so that a remaining portion of said metal layer covers said first dielectric layer; performing a treatment process to transform a top portion of said remaining portion of said metal layer into a passivation layer; and performing a chemical-mechanical polishing (CMP) process until said first dielectric layer is exposed so that a remaining portion of said passivation layer remains in said trench.