| 发明名称 | Lithography method and apparatus | ||
| 摘要 | In an embodiment, a lithography method is disclosed that includes providing a providing a first heat load to a first area of an object, and providing a second heat load to a second area of the object, wherein the second heat load is configured to ensure a deformation of the first area of the object caused by providing both the first heat load and the second heat load is smaller than a deformation of the first area of the object caused by providing only the first heat load. | ||
| 申请公布号 | US9310700(B2) | 申请公布日期 | 2016.04.12 |
| 申请号 | US201113810384 | 申请日期 | 2011.07.18 |
| 申请人 | ASML Netherlands B.V. | 发明人 | Koevoets Adrianus Hendrik;Renkens Michael Jozef Mathijs;Wuister Sander Frederik |
| 分类号 | G03B27/52;G03B27/32;G03B27/02;G03F7/20;B82Y10/00;B82Y40/00;G03F7/00 | 主分类号 | G03B27/52 |
| 代理机构 | Sterne, Kessler, Goldstein & Fox P.L.L.C. | 代理人 | Sterne, Kessler, Goldstein & Fox P.L.L.C. |
| 主权项 | 1. A lithography method comprising: providing a first heat load to a first area of an object; and providing a second heat load to a second area of the object, wherein the first and the second heat loads are provided simultaneously and are configured to provide different intensities using at least one beam of radiation, wherein the second heat load is configured to ensure a deformation of the first area of the object caused by providing both the first heat load and the second heat load is smaller than a deformation of the first area of the object caused by providing only the first heat load, wherein the object is a substrate, an imprint template, or a reticle. | ||
| 地址 | Veldhoven NL | ||