SEMICONDUCTOR DEVICE AND CRYSTAL LAMINATE STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide: a semiconductor device which can suppress the increase in resistance of a channel layer; and a crystal laminate structure which can be used for manufacturing such a device.SOLUTION: A GaObased semiconductor device 10 is provided as an embodiment, which comprises: a high-resistance substrate 11 made of a β-GaObased monocrystalline including an acceptor impurity; a buffer layer 12 on the high-resistance substrate 11, which is made of a β-GaObased monocrystalline; and a channel layer 13 on the buffer layer 12, which is made of a β-GaObased monocrystalline including a donor impurity.SELECTED DRAWING: Figure 1