发明名称 ETCHING EQUIPMENT AND ETCHING METHOD
摘要 PROBLEM TO BE SOLVED: To finish, when etching an end face of a substrate, the end face smoothly.SOLUTION: An end face 19a of a substrate 19 is etched by an etchant S by supplying the etchant S to the substrate 19 parallel to the substrate 19 in a state where the substrate 19 rotates around its center. Thus, corrosive capacity for the substrate 19 by the etchant S is enhanced, and an end face 19a of the substrate 19 can be finished smoothly. Moreover, a difference in flow of the etchant S between upstream and downstream can be eliminated, since the substrate 19 rotates around its center, when the etchant S is supplied nearly parallel to the substrate 19. As a result, occurrence of such a situation that variation is caused in an etching treatment depending on the portion of the end face 19a of the substrate 19 is eliminated, and the etching treatment of the end part 19a of the substrate 19 can be performed uniformly.SELECTED DRAWING: Figure 6
申请公布号 JP2016050119(A) 申请公布日期 2016.04.11
申请号 JP20140174127 申请日期 2014.08.28
申请人 SATO KAKOKI CO LTD 发明人 SATO KENJI;SATO NOBORU;SATO ATSUSHI
分类号 C03C15/00;C23F1/08 主分类号 C03C15/00
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