发明名称 METHOD FOR FORMING ELECTRODE
摘要 PROBLEM TO BE SOLVED: To provide a method for forming a contact electrode of a noble metal which is arranged so that a contact electrode is formed on an organic semiconductor layer by electroless plating, and which never modifies the surface geometry of the organic semiconductor layer during the electroless plating. and lowers a contact resistance between the organic semiconductor layer and the contact electrode to a resistance as low as that achieved by vacuum deposition.SOLUTION: A method for forming a contact electrode on an organic semiconductor layer comprises: a pre-processing step where noble metal nanoparticles are adsorbed on the organic semiconductor layer; and a step where after that, a plated metal is deposited on the noble metal nanoparticles in an electroless plating bath of pH5-9.SELECTED DRAWING: Figure 1
申请公布号 JP2016051758(A) 申请公布日期 2016.04.11
申请号 JP20140175244 申请日期 2014.08.29
申请人 UNIV OF TOKYO;ELECTROPLATING ENG OF JAPAN CO 发明人 TAKEYA JUNICHI;ITO MASAHIRO
分类号 H01L21/336;C23C18/30;C23C18/31;C23C18/32;C23C18/38;C23C18/42;H01L21/28;H01L21/288;H01L29/417;H01L29/786;H01L51/05 主分类号 H01L21/336
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