发明名称 |
METHOD FOR FORMING ELECTRODE |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a contact electrode of a noble metal which is arranged so that a contact electrode is formed on an organic semiconductor layer by electroless plating, and which never modifies the surface geometry of the organic semiconductor layer during the electroless plating. and lowers a contact resistance between the organic semiconductor layer and the contact electrode to a resistance as low as that achieved by vacuum deposition.SOLUTION: A method for forming a contact electrode on an organic semiconductor layer comprises: a pre-processing step where noble metal nanoparticles are adsorbed on the organic semiconductor layer; and a step where after that, a plated metal is deposited on the noble metal nanoparticles in an electroless plating bath of pH5-9.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016051758(A) |
申请公布日期 |
2016.04.11 |
申请号 |
JP20140175244 |
申请日期 |
2014.08.29 |
申请人 |
UNIV OF TOKYO;ELECTROPLATING ENG OF JAPAN CO |
发明人 |
TAKEYA JUNICHI;ITO MASAHIRO |
分类号 |
H01L21/336;C23C18/30;C23C18/31;C23C18/32;C23C18/38;C23C18/42;H01L21/28;H01L21/288;H01L29/417;H01L29/786;H01L51/05 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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