| 摘要 |
The present invention relates to a thin film transistor substrate for a flat panel display such as an organic light emitting diode display, and a method for manufacturing the same with reduced parasitic capacitance by improving insulating properties between a scan line and a data line, capable of high speed driving. The thin film transistor substrate for a flat panel display includes a scan line disposed on a substrate; a buffer layer covering the scan line; a semiconductor layer disposed on the buffer layer; a gate insulating film and a gate electrode disposed on the semiconductor layer; an anode electrode; an intermediate insulating film covering the gate electrode; and a data line disposed on the intermediate insulating film. The scan line is disposed on the substrate in one direction of a pixel region. The gate insulating film covers a channel area which is a center area of the semiconductor layer. The gate electrode is overlapped with the channel area on the gate insulating film, and connected with the scan line. The anode electrode is disposed in the pixel region on the gate insulating film. The intermediate insulating film covers the gate electrode, and exposes most center area of a pixel electrode. The data line is disposed on the intermediate insulating film in the other direction of the pixel region. |
