发明名称 MOLDED DIELECTRIC NANOSTRUCTURE
摘要 An embodiment concerns selective etching of a structure (e.g., a fin) to form a void with the shape of the original structure. This void then functions as a mold. Flowable dielectric material fills the void to form the same shape as the original structure/mold. Post-processing then occurs (e.g., oxidation build up and annealing) to harden the dielectric in the void. The resulting product is a molded dielectric nanostructure that has the same shape as the original structure but consists of a different material (e.g., dielectric instead of silicon). Other embodiments are described herein.
申请公布号 WO2015097684(A8) 申请公布日期 2016.04.07
申请号 WO2015IB00218 申请日期 2015.02.23
申请人 INTEL CORPORATION 发明人 KIM, SEIYON;KUHN, KELIN, J.
分类号 H01L21/762;H01L21/336;H01L29/78 主分类号 H01L21/762
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