发明名称 |
MOLDED DIELECTRIC NANOSTRUCTURE |
摘要 |
An embodiment concerns selective etching of a structure (e.g., a fin) to form a void with the shape of the original structure. This void then functions as a mold. Flowable dielectric material fills the void to form the same shape as the original structure/mold. Post-processing then occurs (e.g., oxidation build up and annealing) to harden the dielectric in the void. The resulting product is a molded dielectric nanostructure that has the same shape as the original structure but consists of a different material (e.g., dielectric instead of silicon). Other embodiments are described herein. |
申请公布号 |
WO2015097684(A8) |
申请公布日期 |
2016.04.07 |
申请号 |
WO2015IB00218 |
申请日期 |
2015.02.23 |
申请人 |
INTEL CORPORATION |
发明人 |
KIM, SEIYON;KUHN, KELIN, J. |
分类号 |
H01L21/762;H01L21/336;H01L29/78 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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