发明名称 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
摘要 Provided is gas supply technology that is capable of solving problems, such as hunting, etc. Two first supply units (21a) supply a first constant amount of reactive gas from openings (22a) into a chamber (11). A second supply unit (21b) supplies a second variable amount of reactive gas from an opening (22b) into the chamber (11). During plasma processing, the second amount is controlled through feedback control based on a PEM method. As described above, a sputtering apparatus (10) has the single second supply unit (21b) which performs feedback control of the second amount, and thus a hunting problem attributable to the presence of a plurality of feedback controls is overcome.
申请公布号 KR20160038727(A) 申请公布日期 2016.04.07
申请号 KR20150117382 申请日期 2015.08.20
申请人 SCREEN HOLDINGS CO., LTD. 发明人 OSAWA ATSUSHI;YAMAMOTO SATOSHI
分类号 H01J37/32 主分类号 H01J37/32
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