发明名称 |
ULTRAVIOLET LIGHT EMITTING DEVICE DOPED WITH BORON |
摘要 |
In an example, the present invention provides a light-emitting device configured to emit electromagnetic radiation in a range of 210 to 360 nanometers. The device has a substrate member comprising a surface region. The device has a thickness of AlGaN material formed overlying the surface region and an aluminum concentration characterizing the AlGaN material having a range of 0 to 100%. The device has a boron doping concentration characterizing the AlGaN material having a range between 1e15 to 1e20 atoms/centimeter3. |
申请公布号 |
WO2016054191(A1) |
申请公布日期 |
2016.04.07 |
申请号 |
WO2015US53199 |
申请日期 |
2015.09.30 |
申请人 |
RAYVIO CORPORATION |
发明人 |
LIAO, YITAO;COLLINS, DOUGLAS A.;ZHANG, WEI |
分类号 |
H01L33/50 |
主分类号 |
H01L33/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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