SURFACE-EMITTING SEMICONDUCTOR LASER DEVICE AND METHOD FOR PRODUCING THE SAME

摘要

A surface-emitting semiconductor laser device includes a substrate and a semiconductor layer disposed on the substrate. The semiconductor layer includes a first semiconductor multilayer film of a first conductivity type, a first spacer layer, an active layer, a second spacer layer, and a second semiconductor multilayer film of a second conductivity type. The first semiconductor multilayer film and the second semiconductor multilayer film form a cavity. A peak of a pattern of a standing wave formed by the cavity and the center of the active layer are located at different positions.

主权项

1. A surface-emitting semiconductor laser device comprising:
a substrate; and a semiconductor layer disposed on the substrate, the semiconductor layer including
a first semiconductor multilayer film of a first conductivity type,a first spacer layer,an active layer,a second spacer layer, anda second semiconductor multilayer film of a second conductivity type,the first semiconductor multilayer film and the second semiconductor multilayer film forming a cavity, wherein a peak of a pattern of a standing wave formed by the cavity and a center of the active layer are located at different positions.