METHOD FOR FORMING DENDRITIC SILVER WITH PERIODIC STRUCTURE AS LIGHHT-TRAPPING LAYER

摘要

The invention is related to a method for forming dendritic silver with periodic structure as light-trapping layer, includes these steps: form a photoresist layer on a conductive substrate, and at least two coherent light beams is provided in using a laser interference lithography apparatus, to form a plurality of particular patterns respectively on the setting-exposure positions of the conductive substrate in sequence till the particular periods pattern formed. Thereafter, form the dendritic silver nanostructure with period pattern on the conductive substrate via electrochemical process, wherein operating voltage is 2V or higher, and electrochemical reaction time is 10 sec or higher.

主权项

1. A method for forming dendritic silver with periodic structure as light-trapping layer, including the steps of:
(a) coating a photoresist layer on a side surface of a conductive substrate; (b) using an interference lithography device to provide and project at least two coherent beams of specific shapes onto the conductive substrate for forming an exposure area of a specific interference pattern thereon; (c) adjusting and moving the at least two coherent beams to project upon another exposure area of the conductive substrate; (d) repeating steps (b) to (c) for a plurality of times for forming a plurality of exposure areas of the specific interference pattern that are interconnected to one another into a pattern of a specific pitch period; (e) performing an exposure lithography process; (f) placing the conductive substrate and a conductor separately inside a container containing an electrolyte while connecting the conductive substrate and the conductor respectively to a cathode and an anode of a direct-current source for enabling an electrochemical reaction; and (g) performing an etching process upon the conductive substrate for forming a dendritic silver nanostructure with periodic patterns that is to be used as a light trapping layer; and the specific interference pattern is a one-dimensional interference pattern; and the operating voltage of the direct-current source for enabling the electrochemical reaction is at least 2V, while the reaction time of the electrochemical reaction is lasting for at least 10 seconds.