| 发明名称 |
ELECTRON DEVICE AND METHOD FOR MANUFACTURING AN ELECTRON DEVICE |
| 摘要 |
According to embodiments of the present invention, an electron device is provided. The electron device includes a support substrate, a conductive planar slow-wave structure on the support substrate, the conductive planar slow-wave structure being adapted to receive an electromagnetic wave signal for interaction with an electron beam, and a dielectric layer arrangement in between the conductive planar slow-wave structure and the support substrate, the dielectric layer arrangement being arranged on the support substrate at only one or more support substrate portions overlapping with the conductive planar slow-wave structure. According to further embodiments of the present invention, a method for manufacturing an electron device is also provided. |
| 申请公布号 |
US2016099127(A1) |
申请公布日期 |
2016.04.07 |
| 申请号 |
US201514876191 |
申请日期 |
2015.10.06 |
| 申请人 |
Nanyang Technological University |
发明人 |
Aditya Sheel;Chen Zhao |
| 分类号 |
H01J23/27;H01J25/34;H01J9/00;H01J23/24 |
主分类号 |
H01J23/27 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An electron device comprising:
a support substrate; a conductive planar slow-wave structure on the support substrate, the conductive planar slow-wave structure being adapted to receive an electromagnetic wave signal for interaction with an electron beam; and a dielectric layer arrangement in between the conductive planar slow-wave structure and the support substrate, the dielectric layer arrangement being arranged on the support substrate at only one or more support substrate portions overlapping with the conductive planar slow-wave structure. |
| 地址 |
Singapore SG |
