发明名称 INFRARED IMAGE SENSOR
摘要 An image sensor includes a substrate, dual-waveband photosensitive devices, at least one infrared photosensitive device, a transparent dielectric layer, at least one infrared band-pass filter, a color filter layer and a micro-lens layer. The dual-waveband photosensitive devices are disposed in the substrate, and each dual-waveband photosensitive device is configured to sense an infrared light and one visible light. The infrared photosensitive device is disposed in the substrate, in which the dual-waveband photosensitive devices and the infrared photosensitive device are arranged in an array. The transparent dielectric layer is disposed over the dual-waveband photosensitive devices and the infrared photosensitive device. The infrared band-pass filter is disposed in the transparent dielectric layer and corresponds to the infrared photosensitive device. The color filter layer is disposed to cover the transparent dielectric layer and the infrared band-pass filter. The micro-lens layer is disposed on the color filter layer.
申请公布号 US2016099271(A1) 申请公布日期 2016.04.07
申请号 US201414505340 申请日期 2014.10.02
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 CHOU Keng-Yu;HASHIMOTO Kazuaki;LIU Jen-Cheng;SZE Jhy-Jyi;CHIANG Wei-Chieh;CHEN Pao-Tung
分类号 H01L27/146;H04N5/33 主分类号 H01L27/146
代理机构 代理人
主权项 1. An image sensor, comprising: a substrate; a plurality of dual-waveband photosensitive devices disposed in the substrate, wherein each of the dual-waveband photosensitive devices is configured to sense an infrared light and one visible light; at least one infrared photosensitive device disposed in the substrate, wherein the dual-waveband photosensitive devices and the at least on infrared photosensitive device are arranged in an array; a transparent dielectric layer disposed over the dual-waveband photosensitive devices and the at least one infrared photosensitive device; at least one infrared band-pass filter disposed in the transparent dielectric layer and corresponding to the at least one infrared photosensitive device; a color filter layer disposed to cover the transparent dielectric layer and the at least one infrared band-pass filter; and a micro-lens layer disposed on the color filter layer.
地址 Hsinchu TW