SEMICONDUCTOR LASER DEVICE

摘要

In at least one opening of a plurality of openings 10a and 10b, the following inequality is satisfied:;x≦½·t·(kx/ky);where x represents a minimum distance in a horizontal direction between an end of the one opening and an end of a submount 8, and t represents a thickness of the submount, and
in at least one of the other openings different from the one opening, the following inequality is satisfied:;x>½·t·(kx/ky)

主权项

1. A semiconductor laser device, comprising: a submount having a thermal conductivity of kx in a horizontal direction, and a thermal conductivity of ky in a vertical direction that is joined on a heat sink; and a laser element having a plurality of light emitting regions resulting from a plurality of openings for a single laser element, and being mounted on the submount such that a side of the element having an active layer faces a side of the submount, wherein in at least one opening of the plurality of openings, the following inequality is satisfied:
x≦½·t·(kx/ky)where x represents a minimum distance in the horizontal direction between an opening end of the one opening and an end of the submount, and t represents a thickness of the submount, and in at least one of the other openings different from the one opening, the following inequality is satisfied:
x>½·t·(kx/ky)