| 发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT, VARIABLE GAIN AMPLIFIER, AND SENSING SYSTEM |
| 摘要 |
Provided is a semiconductor integrated circuit including a pad Pd1 provided on one end side of a resistive element R1 externally provided, a pad Pd5 provided on a different end side of the resistive element R1; an operation amplifier A1, a signal line L11 wired between an output terminal of the operation amplifier A1 and the pad Pd1, a signal line L21 wired between an inverting input terminal of the operation amplifier A1 and the pad Pd5, a ESD protection element r11 provided to the signal line L11, and a signal line L31, through which a voltage signal of the pad Pd1 is transmitted. The signal line L31 is connected to the pad Pd1. |
| 申请公布号 |
US2016099695(A1) |
申请公布日期 |
2016.04.07 |
| 申请号 |
US201514865204 |
申请日期 |
2015.09.25 |
| 申请人 |
Renesas Electronics Corporation |
发明人 |
Kiritani Masahide |
| 分类号 |
H03G3/02;H03F3/04 |
主分类号 |
H03G3/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor integrated circuit comprising:
a first pad provided on one end side of a first resistive element externally provided; a second pad provided on a different end side of the first resistive element; an operation amplifier; a first signal line wired between an output terminal of the operation amplifier and the first pad; a second signal line wired between one input terminal of the operation amplifier and the second pad; a first ESD protection element provided to the first signal line; and a third signal line, through which a voltage signal of the first pad is transmitted, the third signal line being connected to the first pad. |
| 地址 |
Tokyo JP |
