APPARATUS AND METHOD OF MANUFACTURING FIN-FET DEVICES

摘要

To solve manufacturing complexity, a method for manufacturing a Fin-FET device includes a step of forming fins in a substrate. The substrate includes a center region and a peripheral region for surrounding the center region. A gate material layer is deposited on the fins. The gate material layer is etched by using an etching gas to form a gate. The etching gas is supplied with a ratio of the flow rate of the center region to the flow rate of the peripheral region.