发明名称 Simultaneous grain modulation for BEOL applications
摘要 The invention is directed to an improved semiconductor structure, such that within the same insulating layer, Cu interconnects embedded within the same insulating level layer have a different Cu grain size than other Cu interconnects embedded within the same insulating level layer.
申请公布号 US7732922(B2) 申请公布日期 2010.06.08
申请号 US20080970149 申请日期 2008.01.07
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 YANG CHIH-CHAO;HSU LOUIS C.;JOSHI RAJIV V.
分类号 H01L29/40 主分类号 H01L29/40
代理机构 代理人
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