| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an apparatus and a method of plasma CVD capable of forming a uniform thin film of high quality by preventing the abnormal discharge and intrusion of generated particles into the film. <P>SOLUTION: The apparatus of plasma CVD includes: a main roll 6 and a plasma generation electrode 7 each disposed in a vacuum container to form a thin film on the surface of a long substrate while transferring the long substrate over the surface of the main roll ; at least one sidewall 8 extending in the width direction of the long substrate disposed at the upstream side and downstream side in the direction of transferring the long substrate in a manner of surrounding/sandwiching a film forming space formed between the main roll and the plasma generation electrode with the sidewalls electrically insulated from the plasma generation electrode; and one or more of gas feed-hole lines 9 each formed of a plurality of gas feed holes arranged in one line in the width direction of the long substrate with the lines disposed on either of the sidewalls each disposed at the upstream side and the downstream side in the direction of transferring the long substrate. <P>COPYRIGHT: (C)2013,JPO&INPIT |
