| 发明名称 |
MULTI-BIT MAGNETIC TUNNEL JUNCTION MEMORY AND METHOD OF FORMING THE SAME |
| 摘要 |
A spin-torque transfer (STT) magnetic tunnel junction (MTJ) memory includes a unitary fixed magnetic layer, a magnetic barrier layer on the unitary fixed magnetic layer, a free magnetic layer having a plurality of free magnetic islands on the magnetic barrier layer, and a cap layer overlying the free magnetic layer. Also a method of forming an STT-MTJ memory. |
| 申请公布号 |
EP2807648(B1) |
申请公布日期 |
2016.04.06 |
| 申请号 |
EP20130706101 |
申请日期 |
2013.01.23 |
| 申请人 |
QUALCOMM INCORPORATED |
发明人 |
WU, WENQING;LI, SEAN;ZHU, XIAOCHUN;MADALA, RAGHU SAGAR;KANG, SEUNG H.;YUEN, KENDRICK H. |
| 分类号 |
G11C11/15;G11C11/16;H01L43/08;H01L43/12 |
主分类号 |
G11C11/15 |
| 代理机构 |
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